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| Datasheet File OCR Text: |
| Light-current 800 CW drive Tc = 25C Far field pattern 1.0 CW drive Tc = 25C Po = 500 mW Spectrum 1.0 CW drive Tc = 25C Po = 500 mW 0.8 0.8 600 Po [mW] 0.6 400 0.4 200 0.2 // 0.6 0.4 0.2 0 0 300 600 If [mA] 900 1200 0.0 -40 -20 0 20 40 0.0 650 660 670 680 690 Angle [deg.] Wavelength [nm] s Figure 1 SLD1332V Representative Characteristics s Table 1 SLD1332V Main Characteristics P-side electrode Item Threshold current Operating current Operating voltage Symbol Typical value Ith Iop Vop p // D 400 900 2.4 670 8 deg. 24 1.0 mW/mA Unit mA V nm Laser beam emitting point Active layer Oscillation wavelength Radiation angle Parallel to junction Perpendicular to junction GaAs substrate Differential efficiency 100 m N-side electrode Conditions: TC = 25C Po = 500 mW@CW s Figure 2 SLD1332V Chip Structure // -3 -2 -1 0 1 2 3 Unit: m -80 -60 -40 -20 0 20 40 60 80 Unit: m s Figure 3 SLD1332V Near-Field Pattern |
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